The Formation of Nitridation Damage during the Growth of GaN on GaAs(001)

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概要

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• We report a correlation between the surface reconstruction transition during the initial phase of the molecular beam epitaxy growth of GaN on GaAs(001) and the nitridation damage determined final layer morphology. In order to study the formation of the nitrogen damage under a wide range of growth conditions, a series of layers were grown by changing the V/III-ratio through the Ga-flux, while keeping all other growth parameters constant. The results, describing the strong effect of the first N-terminated GaN ($3\times 3$) monolayer, were summarised in defect formation models for N-rich and Ga-rich conditions, defining the means of near-stoichiometric growth.

• Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
• 2001-02-15

著者

• Andersson Thorvald

  Applied Semiconductor Physics, Department of Microelectronics and Nanoscience, Chalmers University of Technology and Göteborg University, Göteborg SE-412 96, Sweden

• Zsebök Otto

  Applied Semiconductor Physics, Department of Microelectronics and Nanoscience, Chalmers University of Technology and Göteborg University, Göteborg SE-412 96, Sweden

• Thordson Jan

  Applied Semiconductor Physics, Department of Microelectronics and Nanoscience, Chalmers University of Technology and Göteborg University, Göteborg SE-412 96, Sweden

• Zsebok Otto

  Applied Semiconductor Physics, Department of Microelectronics and Nanoscience, Chalmers University of Technology and Göteborg University, Göteborg SE-412 96, Sweden

関連論文

• The Formation of Nitridation Damage during the Growth of GaN on GaAs(001)

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