Near-Infrared Photoluminescence and Electroluminescence of Neodymium(III), Erbium(III), and Ytterbium(III) Complexes

概要

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Tris(dibenzoylmethanato)(monobathophenanthroline)lanthanide(III) complex [Ln(DBM)3 bath (Ln: Nd, Er and Yb)] both in solutions and thin films at room temperature showed narrow band photoluminescence (PL) due to the $f$–$f$ transitions in the near-IR region: 890, 1070 and 1350 nm for Nd(III), 980 and 1540 nm for Er(III), and 985 nm for Yb(III). The PL efficiencies in solution were determined [$\phi_{\text{PL}}=3.3\times 10^{-3}$ for Nd(III), $7.0\times 10^{-5}$ for Er(III), and $1.4\times 10^{-2}$ for Yb(III)]. Organic electroluminescent (EL) devices having the structure of glass substrate/indium-tin oxide/$N$,$N^{\prime}$-diphenyl-$N$,$N^{\prime}$-di($m$-tolyl)benzidine{\slash}Ln(DBM)3bath(Ln: Nd, Er and Yb)/bathocuproine/Mg:Ag/Ag were fabricated, giving the EL bands around 900–1600 nm at room temperature. The external near-IR EL efficiencies at low current density were estimated by comparing with that of the Eu(III) device having the same structure. The saturation of near-IR EL intensity observed at the high current density suggested that the near-IR EL should suffer the T–T annihilation.
2001-01-15