A 1550 nm Single-Photon Detector Using a Thermoelectrically Cooled InGaAs Avalanche Photodiode

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概要

• 論文の詳細を見る

• We report a gated-mode single-photon detector sensitive to 1550 nm radiation using a thermoelectrically cooled InGaAs avalanche photodiode. At the operation temperature of 238 K, we have obtained a quantum efficiency of 24.3% with a dark-count probability per gate of $9.4\times 10^{-5}$.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 2001-01-15

著者

• YOSHIZAWA Akio

  Electrotechnical Laboratory

• TSUCHIDA Hidemi

  Electrotechnical Laboratory

• Tsuchida Hidemi

  Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba 305-8568, Japan

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• A 1550 nm Single-Photon Detector Using a Thermoelectrically Cooled InGaAs Avalanche Photodiode

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