High Density Aluminum Etcher Process Window Characterization and Comparison

スポンサーリンク

概要

• 論文の詳細を見る

• The process characteristics of four, high density, aluminum, plasma etchers using three types of plasma sources have been experimentally studied. Aluminum etch rate was found to depend mainly on process pressure, total flow rate, chamber volume, and chlorine flow rate. In addition, when etching with a BCl3/Cl2 chemistry, aluminum line profile appears to be comparable between plasma sources. Electrical breakdown on a IC capacitor, aluminum line critical dimensions, and aluminum and photoresist etch rate uniformities were found to differ between etcher types. Since etch rate uniformities and aluminum line critical dimensions appear to be determined by ion current flux, chamber design and process parameters, and similar ion current flux values and process parameters can be obtained with different plasma sources, it is suggested that the plasma source has limited affect on these characteristics. Only breakdown voltage appears to depend on the plasma source.

• Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
• 1998-04-30

著者

• Jacobs John

  Process Engineering Department, VLSI Manufacturing Engineering Division, NEC Corporation,

• Saito Kazumi

  Process Engineering Department, VLSI Manufacturing Engineering Division, NEC Corporation,

• Yamamoto Jiro

  Process Engineering Department, VLSI Manufacturing Engineering Division, NEC Corporation,

関連論文

• High Density Aluminum Etcher Process Window Characterization and Comparison

スポンサーリンク