Photoresist Chemical Mechanical Polishing for Shallow Trench Isolation

スポンサーリンク

概要

• 論文の詳細を見る

• We investigated the chemical mechanical polishing (CMP) characteristics of photoresist for the first time. It was found that photoresist polishing rates are strongly dependent on photoresist baking temperature. The photoresist polishing rate exceeded 7000 nm/min, which is 87 times higher than the value for SiO2, after baking at 170°C, but matched that of SiO2 after baking at 220°C at a polishing pressure of 230 g/cm2. The photoresist polishing rate after baking at 240°C was lower than that of SiO2. Using these photoresist CMP characteristics, a simple shallow trench isolation (STI) process was achieved.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 1998-04-15

著者

• ITOH Akio

  Electron Devices and Materials Laboratory, Fujitsu Laboratories Limited

• IMAI Masahiko

  Electron Devices and Materials Laboratory, Fujitsu Laboratories Limited

• ARIMOTO Yoshihiro

  Electron Devices and Materials Laboratory, Fujitsu Laboratories Limited

• Itoh Akio

  Electron Devices and Materials Laboratory, Fujitsu Laboratories Limited, Kanagawa 243-0197, Japan

関連論文

• Photoresist Chemical Mechanical Polishing for Shallow Trench Isolation
• Photoresist CMP for Shallow Trench Isolation
• Some Aspects of ESCA Spectra of Single Crystals and Thin Films of Titanium Carbide
• Photoresist Chemical Mechanical Polishing for Shallow Trench Isolation

スポンサーリンク