Optical and Electrical Properties of Sn-doped Indium Oxide Films Deposited on Polyester by Reactive Evaporation

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概要

• 論文の詳細を見る

• Transparent conducting Sn-doped indium oxide (ITO) films have been prepared on polyimide (PI) thin film substrate at low substrate temperature by reactive evaporation. The structural, optical and electrical properties of the deposited films have been investigated. High quality films with resistivity as low as 7×10-4 Ω·cm and transmittance over 80% have been obtained. The temperature dependence of mobility and carrier concentration have been measured over a temperature range 10–400 K. Corresponding scattering mechanism of charge carriers in the films have been discussed.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 1998-10-15

著者

• Ma Jin

  Institute Of Chemistry Chinese Academy Of Sciences

• Zhao Junqing

  Institute Of Optoelectronic Materials And Devices Shandong University

• Li Shuying

  Institute Of Optoelectronic Materials And Devices Shandong University

• Ma Honglei

  Institute Of Optoelectronic Materials And Devices Shandong University

• Zhang Dehang

  Physics Department Shandong University

• Zhang Dehang

  Physics Department, Shandong University, Jinan 250100, P.R. China

• Li Shuying

  Institute of Optoelectronic Materials and Devices, Shandong University, Jinan 250100, P.R. China

関連論文

• Optical and Electrical Properties of Sn-doped Indium Oxide Films Deposited on Polyester by Reactive Evaporation
• A Novel Method of Real-time Size Control of Nanoaggregates by AFM
• Optical and Electrical Properties of Sn-doped Indium Oxide Films Deposited on Polyester by Reactive Evaporation

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