Simultaneous Operation of Superconducting Field Effect Transistors
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概要
- 論文の詳細を見る
A new process was developed for preparing four superconducting field effect transistors (SuFET's) on a substrate. This process yielded the gate structure of YBa2Cu3O7- x/SrTiO3/YBa2Cu3O7- x (YBCO/STO/YBCO) and the contact structure of buried YBCO electrodes. The average T c of the YBCO (100 nm)/STO (200 nm)/ YBCO (5 nm) structures was 49.7 K and the I–V characteristics of gate STO were symmetric. The temperature dependence of transconductance was larger compared with other SuFET's reported to date. Furthermore, we confirmed the operation of all the SuFET's on one substrate and two adjacent SuFET's connected in series. This device fabrication process also led to improved T c values of ultrathin YBCO channels.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 1997-08-15
著者
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NAKAMURA Takao
Basic High-Technology Laboratories, Sumitomo Electric Industries, Ltd.
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INADA Hiroshi
Basic High-Technology Laboratories, Sumitomo Electric Industries, Ltd.
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IIYAMA Michitomo
Basic High-Technology Laboratories, Sumitomo Electric Industries, Ltd.
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Inada Hiroshi
Basic High-Technology Laboratories, Sumitomo Electric Industries, Ltd.,
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Iiyama Michitomo
Basic High-Technology Laboratories, Sumitomo Electric Industries, Ltd.,
関連論文
- Simultaneous Operation of Superconducting Field Effect Transistors
- In Situ Surface Characterization of SrTiO_3(100)Substrates for Well-defined SrTiO_3 and YBa_2Cu_3O_ Thin Film Growth
- In Situ Surface Characterization of YBa_2Cu_3O_ Thin Films Grown by Pulsed Laser Deposition
- Simultaneous Operation of Superconducting Field Effect Transistors