A Comprehensive Study of High-Level Free-Carrier Injection in Bipolar Junction Transistors
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概要
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This paper presents a comprehensive study on the effects of high-level free-carrier injection on the current transport of bipolar junction transistors (BJTs). Detailed information for the free-carrier concentration, electric field, and drift and diffusion current components in the quasi-neutral base (QNB) under high-level injection are calculated using the modified ambipolar transport equation and using several different approximations for the majority-carrier current in the QNB. It is shown that high-level injection can create a large retarding field which is in the opposite direction of the built-in field associated with the nonuniform doping concentration. High-level injection also enhances recombination in the QNB, thus resulting in a position-dependent minority-carrier current in the region even if the base is thin. Our results further suggest that the widely used zero majority current approximation gives rise to a larger error compared to other lesser known approximations.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1996-07-15
著者
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Liou J.
Department Of Electrical And Computer Engineering University Of Central Florida
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Sanchez F.
Departamento De Electronica Universidad Simon Bolivar
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Yue Y.
Department Of Electrical And Computer Engineering University Of Central Florida
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Ortiz-Conde A.
Departamento de Electrónica, Universidad Simón Bolivar, Caracas 1080-A, Venezuela
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Liou J.
Department of Electrical and Computer Engineering, University of Central Florida, Orlando, FL 32816, USA
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Sanchez F.
Departamento de Electrónica, Universidad Simón Bolivar, Caracas 1080-A, Venezuela
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- Preface
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