Bismuth Titanate Thin Films on Si with Buffer Layers Prepared by Laser Ablation and Their Electrical Properties

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概要

• 論文の詳細を見る

• Bismuth titanate thin films are grown on SiO2 /Si and Pt substrates at temperatures of 300–500°C by the laser ablation method, and their structural and electrical properties investigated. The films prepared on Si substrates with a Pt or Bi2Ti2O7(BTO) buffer layer have c-axis and (117) orientations, although the films on Pt and SiO2/Si substrates orient preferentially along the c-axis and (117) direction, respectively. Capacitance-voltage hysteresis loops of bismuth titanate thin films on SiO2/Si and BTO/Si are observed corresponding to ferroelectric hysteresis of the film. Current-voltage characteristics of bismuth titanate films on Pt and BTO/Si substrates show low leakage current.

• 1996-02-28

著者

• Okuyama Masanori

  Depantment of Electrical Engineering, Faculty of Engineering Science, Osaka University,

• Wu Wenbiao

  Depantment of Electrical Engineering, Faculty of Engineering Science, Osaka University,

• Fumoto Keigo

  Depantment of Electrical Engineering, Faculty of Engineering Science, Osaka University,

• Oishi Yoshihiro

  Depantment of Electrical Engineering, Faculty of Engineering Science, Osaka University,

• Hamakawa Yoshihiro

  Depantment of Electrical Engineering, Faculty of Engineering Science, Osaka University,

関連論文

• Bismuth Titanate Thin Films on Si with Buffer Layers Prepared by Laser Ablation and Their Electrical Properties

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