Electrooptical Properties of the Si δ-doped GaAs/AlGaAs Triple-Barrier Resonant Tunneling Structure

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概要

• 論文の詳細を見る

• The electrooptical properties of a Si δ-doped GaAs/Al0.3Ga0.7As triple-barrier resonant tunneling (TRT) nanostructure have been studied by photoreflectance spectroscopy from 20 K to room temperature. The TRT structure forms two coupled quantum wells. The first and the second electronic subbands in the wide well are partially filled, and the corresponding optical transitions are suppressed. The strongest spectral feature is due to the enhancement of the subband resonance between the two coupled wells. The ionized δ–doping centers in the Al0.3Ga0.7As side barriers can induce internal electric fields, and cause oscillatory spectral features when the photon energy is larger than the gap of Al0.3Ga0.7As. Analyzing the oscillatory part of the spectrum gives an internal electric field of 32 kV/cm, and an estimation of the electron subband energy in the ionized δ-doping center induced potential wells.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 1996-02-15

著者

• Lu Chien-rong

  Department Of Physics National Taiwan Normal University

• Du Szu-ku

  Department Of Physics National Taiwan Normal University

• Chang Jia

  Department Of Physics National Taiwan Normal University

• Lu Chien-Rong

  Department of Physics, National Taiwan Normal University, Taipei, Taiwan 11718, R.O.C.

• Chang Jia

  Department of Physics, National Taiwan Normal University, Taipei, Taiwan 11718, R.O.C.

関連論文

• Electrooptical Properties of the Si δ-doped GaAs/AlGaAs Triple-Barrier Resonant Tunneling Structure
• Electrooptical Properties of the Si δ-doped GaAs/AlGaAs Triple-Barrier Resonant Tunneling Structure

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