Effect of Depositing a–Si Thickness on Characteristics of Electric Double Probe Exposed to a Silane Plasma

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概要

• 論文の詳細を見る

• To study the change in characteristics of a double probe exposed to silane plasma, we measured the $V$–$I$ characteristics of a double probe for various a-Si thicknesses, and compared the experimental results with results calculated by a simple model. It is found that the change in $V$–$I$ characteristics of the double probe was caused by the deposition of resistive material on probe surface, and it is expected that the change in the $V$–$I$ characteristics of a double probe will be utilized to monitor the thickness of a-Si deposition.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 1989-02-20

著者

• Kudo Kouichi

  Depertment of Electrical Engineering, Fukuoka Institute of Technology, Fukuoka 811-02

関連論文

• Effect of Depositing a–Si Thickness on Characteristics of Electric Double Probe Exposed to a Silane Plasma

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