Properties of Aluminum-Doped ZnO Thin Films Grown by Electron Beam Evaporation

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概要

• 論文の詳細を見る

• Highly conductive thin films of ZnO have been prepared by conventional electron beam evaporation on glass substrates. The Al2O3 content of 0–5 wt% was added as dopant into ZnO to decrease resistivity of ZnO films. An Al-doped ZnO film with a resistivity of $1.0\times 10^{-3}$ $\Omega$cm is obtained at a substrate temperature of 300°C with 1.0 wt% Al2O3 content; transmittance of this film is above 90% in the visible range with 100 nm thickness. The ZnO source material doped with Al2O3 is evaporated efficiently by a lower electron beam power compared to the case of nondoped ZnO. The $c$-axis orientation of ZnO films is facilitated by the addition of Al2O3 and the $c$-axis of Al-doped ZnO films is oriented perpendicular to glass substrates in the substrate temperature range of 60°C–350°C.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 1989-02-20

著者

• Kuroyanagi Akio

  Department Of Electronic Engineering Institute Of Vocational And Technical Education

• Kuroyanagi Akio

  Department of Electronic Engineering, Institute of Vocational and Technical Education, 1960 Aihara, Sagamihara, Kanagawa 229

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• Properties of Aluminum-Doped ZnO Thin Films Grown by Electron Beam Evaporation

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