Studies on Photo-Effects in Semiconductor Surfaces
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概要
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Photo-voltage at the semiconductor surface has been investigated by using a new solution of Poisson-Boltzmann equation. Brattain and Bardeen modex for surface traps has been taken in the formulation. Dependence of normalised surface photo-voltage on surface potential under different carrier densities has been estimated and the results are presented graphically.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1989-02-20
著者
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DE S.
Centre of Advanced Study in Radio Physics and Electronics, University of Calcutta
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LAHIRI A.
Centre for Advanced Studies, Department of Metallurgy, Indian Institute of Science
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Pal P.
Centre of Advanced Study in Radio Physics and Electronics, University of Calcutta, 1, Girish Vidyaratna Lane, Calcutta-700 009, India
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Lahiri A.
Centre of Advanced Study in Radio Physics and Electronics, University of Calcutta, 1, Girish Vidyaratna Lane, Calcutta-700 009, India
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Ghosh A.
Centre of Advanced Study in Radio Physics and Electronics, University of Calcutta, 1, Girish Vidyaratna Lane, Calcutta-700 009, India
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Pattanayak T.
Centre of Advanced Study in Radio Physics and Electronics, University of Calcutta, 1, Girish Vidyaratna Lane, Calcutta-700 009, India
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Halder J.
Centre of Advanced Study in Radio Physics and Electronics, University of Calcutta, 1, Girish Vidyaratna Lane, Calcutta-700 009, India
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Chatterji A.
Centre of Advanced Study in Radio Physics and Electronics, University of Calcutta, 1, Girish Vidyaratna Lane, Calcutta-700 009, India
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