Effect of the Structure of a Photoactive Compound on the Dissolution Inhibition Effect
スポンサーリンク
概要
- 論文の詳細を見る
The dependence of the dissolution rate of unexposed resist on the concentration of a developer was investigated using a practical resist composition and its film. From the results, the mechanism of the dissolution inhibition effect was discussed. The lower the average value of esterification of a photoactive compound becomes, the higher the dissolution rate becomes and the larger the dependence of the dissolution inhibition effect on the concentration of the developer becomes. The number of all hydroxyl groups in photoactive compounds plays the main role in the dissolution inhibition effect greater than the influence of the number of all hydroxyl groups in the novolak resin, which are out of the interaction with naphthoquinonediazide sulfonyl moieties in the photoactive compound, i.e., "masking effect".
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1989-10-20
著者
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Nagata Hitoshi
Lsi R < D Laboratory Mitsubishi Electric Corporation
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Yamaguchi Atsumi
Lsi Research And Development Laboratory Mitsubishi Electric Corporation
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Kishimura Shinji
Lsi Research And Development Laboratory Mitsubishi Electric Corporation
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Yamaguchi Atsumi
LSI Research and Development Laboratory, Mitsubishi Electric Corporation, Itami 664
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Nagata Hitoshi
LSI R & D Laboratory, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami City, Hyogo-Pref. 664
関連論文
- Effect of Anion in Developer on Dissolution Characteristics of Photoresist : Resist Material and Process
- Effect of Anion in Developer on Dissolution Characteristics of Photoresist
- Effect of the Structure of a Photoactive Compound on the Dissolution Inhibition Effect : Resist Material and Process
- Characteristics of Adhesion between Photoresist and Inorganic Substrate : Resist Material and Process
- Effect of the Structure of a Photoactive Compound on the Dissolution Inhibition Effect