Highly Manufacturable 90 nm NOR Flash Multi-Level Cell Technology with WSix Gate

概要

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The multi-level cell (MLC) technology in flash memory has been focused as one of solution for the enhancement of memory capacity and cost reduction. Recently, we had developed highly manufacturable 90 nm NOR flash MLC technology with WSix gate. This technology presents the control of several critical parameters such as low resistance of word-line, high transistor performance, narrow erase cell threshold voltage distribution, and high reliability characteristics. Here, tungsten silicide (WSix) using dichlorosilane (DCS) gas chemistry is used as gate material in order to reduce word-line resistance. Furthermore, the gate edge profile is carefully controlled by optimizing a gate oxidation condition for narrow cell threshold voltage distribution. Finally, MLC reliability characteristic was obtained by the advanced tunnel oxidation method.
2007-02-25