Superior Nanocrystalline Silicon Network at Enhanced Growth Rate

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概要

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• Structural transformation from amorphous to nanocrystalline-Si phase accomplished by metastable helium atoms has been identified at low growth-temperature, from helium-diluted silane-plasma in plasma enhanced chemical vapor deposition (PECVD). Enhanced rf-powers provide superior crystallinity that contributes electrically high-conducting nc-Si network with reduced bonded hydrogen content. Quantum confinement effects on optical band gap widening are ensured by estimated nano-dimensions of crystallites with enhanced volume-fraction that involves atomic orientations on extremely well-defined lattice planes. Large number of tiny single-domain nanocrystallites cluster together and form larger grains that grow one-over-other along the growth direction and represents an overall corn-like growth. Simultaneous elevation of growth rate warrants enormous technological promise.

• 2007-11-25

著者

• Das Debajyoti

  Nano-Science Group, Energy Research Unit, Indian Association for the Cultivation of Science, Jadavpur, Kolkata-700 032, India

• Bhattacharya Koyel

  Nano-Science Group, Energy Research Unit, Indian Association for the Cultivation of Science, Jadavpur, Kolkata-700 032, India

関連論文

• Superior Nanocrystalline Silicon Network at Enhanced Growth Rate

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