Spin-on n-Type Silicon Films Using Phosphorous-doped Polysilanes
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概要
- 論文の詳細を見る
We have developed a liquid precursor that can be used in a solution process to form n-type doped silicon films. This precursor is based on phosphorus-doped hydrogenated polysilane synthesized by photo-copolymerizing cyclopentasilane and white phosphorus. By spin-coating this precursor, we have prepared n-type amorphous silicon films and polycrystalline silicon films with resistivities of 6.5–27 $\Omega$$\cdot$cm and 2.0–10 m$\Omega$$\cdot$cm, respectively.
- 2007-10-25
著者
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田中 英樹
北陸先端大材料
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Matsuki Yasuo
Tsukuba Research Laboratories, JSR Corporation, 25 Miyukigaoka, Tsukuba, Ibaraki 305-0841, Japan
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Iwasawa Haruo
Tsukuba Research Laboratories, JSR Corporation, 25 Miyukigaoka, Tsukuba, Ibaraki 305-0841, Japan
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Tanaka Hideki
Frontier Device Research Center, Seiko Epson Corporation, 281 Fujimi, Fujimi, Nagano 399-0293, Japan
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Wang Daohai
Tsukuba Research Laboratories, JSR Corporation, 25 Miyukigaoka, Tsukuba, Ibaraki 305-0841, Japan
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Toyoda Naoyuki
Frontier Device Research Center, Seiko Epson Corporation, 281 Fujimi, Fujimi, Nagano 399-0293, Japan
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Aoki Takashi
Frontier Device Research Center, Seiko Epson Corporation, 281 Fujimi, Fujimi, Nagano 399-0293, Japan
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Yudasaka Ichio
Frontier Device Research Center, Seiko Epson Corporation, 281 Fujimi, Fujimi, Nagano 399-0293, Japan
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Shimoda Tatsuya
Frontier Device Research Center, Seiko Epson Corporation, 281 Fujimi, Fujimi, Nagano 399-0293, Japan
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Furusawa Masahiro
Frontier Device Research Center, Seiko Epson Corporation, 281 Fujimi, Fujimi, Nagano 399-0293, Japan
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