Study of Time Dependent Dielectric Breakdown Distribution in Ultrathin Gate Oxide

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概要

• 論文の詳細を見る

• The computer simulations of the time dependent dielectric breakdown (TDDB) percolation path are performed for ultrathin gate oxides. With our new percolation model, an interesting and new behavior of TDDB distribution was found. Weibull slope decreases monotonously with decreasing oxide thickness, and has a gap at an oxide thickness of approximately the effective defect size. This behavior can be understood well if we consider that an overlap of two neighboring defects becomes necessary to cause a sudden breakdown when oxide thickness exceeds the effective defect size. This phenomenon is very important because Weibull slope has a large effect on device reliability.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 2007-07-25

著者

• Mitsuhashi Junichi

  Renesas Technology Corp., Mizuhara, Itami, Hyogo 664-0005, Japan

• Miyakawa Takashi

  Renesas Technology Corp., Mizuhara, Itami, Hyogo 664-0005, Japan

• Koyama Takeshi

  Tokushima Bunri University, Sanuki, Kagawa 769-2193, Japan

• Ichiki Tsutomu

  Renesas Technology Corp., Mizuhara, Itami, Hyogo 664-0005, Japan

• Miyamoto Kazutoshi

  Renesas Technology Corp., Mizuhara, Itami, Hyogo 664-0005, Japan

• Tada Tetsuo

  Tokushima Bunri University, Sanuki, Kagawa 769-2193, Japan

関連論文

• Study of Time Dependent Dielectric Breakdown Distribution in Ultrathin Gate Oxide

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