1.1-μm-Range Low-Resistance InGaAs Quantum-Well Vertical-Cavity Surface-Emitting Lasers with a Buried Type-II Tunnel Junction

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概要

• 論文の詳細を見る

• We propose 1.1-μm-range InGaAs quantum-well (QW) vertical-cavity surface-emitting lasers (VCSELs) with a buried type-II tunnel junction (BTJ). Because of the low electrical resistance of the type-II tunnel junction, the chip resistance was reduced by over 40% compared with conventional oxide-confined VCSELs with the same-size aperture. In an aging test, stable operation at 85 °C was maintained in terms of optical and electrical characteristics for over 1000 h without early failure. The introduction of the type-II TJ structure can suppress self-heating caused by the chip resistance and may be a practical approach to achieving high-speed VCSELs for advanced optical interconnection.

• 2007-06-25

著者

• Anan Takayoshi

  System Devices Research Laboratories, NEC Corporation, Otsu, Shiga 520-0833, Japan

• Yashiki Kenichiro

  System Devices Research Laboratories, NEC Corporation, Otsu, Shiga 520-0833, Japan

• Suzuki Naofumi

  System Devices Research Laboratories, NEC Corporation, Otsu, Shiga 520-0833, Japan

• Fukatsu Kimiyoshi

  System Devices Research Laboratories, NEC Corporation, Otsu, Shiga 520-0833, Japan

• Hatakeyama Hiroshi

  System Devices Research Laboratories, NEC Corporation, Otsu, Shiga 520-0833, Japan

• Tsuji Masayoshi

  System Devices Research Laboratories, NEC Corporation, Otsu, Shiga 520-0833, Japan

関連論文

• 1.1-μm-Range Low-Resistance InGaAs Quantum-Well Vertical-Cavity Surface-Emitting Lasers with a Buried Type-II Tunnel Junction

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