Band-Edge Luminescence at Room Temperature of Boron Nitride Synthesized by Thermal Chemical Vapor Phase Deposition

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概要

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• We successfully synthesized hexagonal boron nitride (hBN), which exhibits intense intrinsic band-edge luminescence in the UV region, on a polycrystalline nickel substrate by thermal chemical vapor phase deposition. In cathodoluminescence (CL) spectra measured at room temperature, the deposited boron nitride (BN) exhibited an intense free-exciton luminescence peak at 215 nm with another luminescence peak at 226 nm. The line width of the Raman peak of the deposited BN is comparable to that of single-crystal hBN synthesized by a high-pressure/high-temperature (HPHT) method. These results indicated that the deposited BN has as high crystallinity as single-crystal hBN synthesized by a HPHT method.

• 2007-04-25

著者

• Tsuda Osamu

  Optronic Materials Center, National Institute of Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan

• Taniguchi Takashi

  Optronic Materials Center, National Institute of Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan

• Watanabe Kenji

  Optronic Materials Center, National Institute of Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan

関連論文

• Band-Edge Luminescence at Room Temperature of Boron Nitride Synthesized by Thermal Chemical Vapor Phase Deposition

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