Location Control of Super Lateral Growth Grains in Excimer Laser Crystallization of Silicon Thin Films by Microlight Beam Seeding

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概要

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• The location of crystal grains in polycrystalline Si thin films under excimer laser crystallization is controlled. A local area of Si film was melted by a microlight beam with a diameter of less than 1 μm, and only one comparatively large grain was grown within the melt. Then, the film was remelted by uniform excimer laser light, and superlateral growth (SLG) was originated from the seed. As a result, location-controlled SLG grains with a diameter of 6 μm were formed.

• 2006-09-25

著者

• Yeh Wenchang

  Department of Electronic Engineering, National Taiwan University of Science and Technology, No. 43, Section 4, Keelung Road, Taipei 106, Taiwan

• Ke Dunyuan

  Department of Electronic Engineering, National Taiwan University of Science and Technology, No. 43, Section 4, Keelung Road, Taipei 106, Taiwan

関連論文

• Location Control of Super Lateral Growth Grains in Excimer Laser Crystallization of Silicon Thin Films by Microlight Beam Seeding

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