Indentation-Induced Selective Growth of Carbon Nanotubes

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概要

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• Semiconductor carbon nanotubes (CNTs) have been selectively grown in an indented area formed on Co (8 nm)/Si substrates by catalytic-ethanol chemical vapor deposition (CVD) at 700 to 900 °C for 10 min. The local pressure caused by the indentation process formed metastable Si, inhibited Co/Si combinations, caused Co aggregation, and acted as a catalyst for CNT growth within indents. The CNTs were single-walled nanotubes or bundle of them, and those qualities were uniform between each of the indents, as confirmed by the scanning-electron microscopy (SEM) and Raman spectra.

• 2006-08-25

著者

• Yasui Takanari

  Department of Mechanical Engineering, Nagaoka University of Technology, 1603-1 Kamitomioka, Nagaoka, Niigata 940-2188, Japan

• Nishimura Seigo

  Department of Mechanical Engineering, Nagaoka University of Technology, 1603-1 Kamitomioka, Nagaoka, Niigata 940-2188, Japan

関連論文

• Indentation-Induced Selective Growth of Carbon Nanotubes

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