High-Speed Resistive Switching of TiO2/TiN Nano-Crystalline Thin Film

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概要

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• High-speed resistive switching was observed in a TiO2/TiN nano-crystalline thin film sandwiched between platinum electrodes. A low resistance state was achieved by applying a single negative 2.0-V amplitude 20-ns wide electric pulse, while a high resistance state was achieved by applying a single positive 2.2-V amplitude 30-ns wide electric pulse. So-called forming process, heating bit material by current flow to form conductive filament path before the resistive switching operation was not required. There was an approximately 40,000% increase in resistive change that was repeatedly obtained in the system.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 2006-03-25

著者

• Fujimoto Masayuki

  Graduate School Of Electronic Science And Technology Shizuoka University

• Ishihara Kazuya

  Advanced Technology Development Laboratories Sharp Corporation

• Hosoi Yasunari

  Advanced Technology Development Laboratories Sharp Corporation

• Kobayashi Shinji

  Advanced Technology Development Laboratories Sharp Corporation

• Koyama Hiroshi

  Graduate School Of Electronic Science And Technology Shizuoka University

• Ishihara Kazuya

  Advanced Technology Development Laboratories, Sharp Corporation, 2613-1 Ichinomoto-cho, Tenri, Nara 632-8567, Japan

• Koyama Hiroshi

  Graduate School of Electronic Science and Technology, Shizuoka University, 3-5-1 Jyouhoku, Hamamatsu, Shizuoka 432-8561, Japan

関連論文

• AFM and TEM observations of α-helix to β-sheet conformational change occurring on carbon nanotubes
• Role of Crystalline Polarity in Interfacial Properties of Zinc Oxide Varistors
• High-Speed Resistive Switching of TiO_2/TiN Nano-Crystalline Thin Film
• High-Speed Resistive Switching of TiO2/TiN Nano-Crystalline Thin Film

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