Epitaxial Growth of GaN on (1 0 0) $\beta$-Ga2O3 Substrates by Metalorganic Vapor Phase Epitaxy

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概要

• 論文の詳細を見る

• Epitaxial growth of nitride compounds by the metalorganic vapor phase epitaxy (MOVPE) technique is demonstrated for the first time on $\beta$-Ga2O3 single crystal substrates, which are near-UV transparent and n-type conductive. High-quality (0 0 0 1) GaN epi-layer with a narrow bandedge luminescence was obtained using a low temperature conductive buffer layer. InGaN multi-quantum well (MQW) structure was also successfully grown. The first blue light-emitting diode (LED) on $\beta$-Ga2O3 with vertical current injection is demonstrated.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 2005-01-10

著者

• Domen Kay

  Eudyna Devices Inc.

• Villora Encarnacion

  Zaiken Waseda University

• SHIMAMURA Kiyoshi

  ZAIKEN, Waseda University

• YUI Keiichi

  Eudyna Devices Inc.

• AOKI Kazuo

  Koha Co., Ltd.

• ICHINOSE Noboru

  ZAIKEN, Waseda University

• Domen Kay

  Eudyna Devices Inc., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan

• Shimamura Kiyoshi

  ZAIKEN, Waseda University, 2-8-26 Nishiwaseda, Shinjuku-ku, Tokyo 169-0051, Japan

• Aoki Kazuo

  Koha Co., Ltd., 2-6-8 Kouyama, Nerima-ku, Tokyo 176-0022, Japan

• Yui Keiichi

  Eudyna Devices Inc., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan

関連論文

• Epitaxial Growth of GaN on (1 0 0) β-Ga_2O_3 Substrates by Metalorganic Vapor Phase Epitaxy
• Epitaxial Growth of GaN on (1 0 0) $\beta$-Ga2O3 Substrates by Metalorganic Vapor Phase Epitaxy

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