18.5% Copper Indium Gallium Diselenide (CIGS) Device Using Single-Layer, Chemical-Bath-Deposited ZnS(O,OH)

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概要

• 論文の詳細を見る

• The recent development of a chemical-bath-deposited (CBD) ZnS(O,OH) layer that enabled an 18.5%-efficient copper indium gallium diselenide (CIGS) devices using a single-layer of CBD ZnS(O,OH) is reported in this paper. Such buffer layers could potentially replace CdS in the CIGS solar cell.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 2004-11-15

著者

• Bhattacharya Raghu

  National Renewable Energy Laboratory (NREL), 1617 Cole Blvd., Golden, CO 80401, U.S.A.

• Contreras Miguel

  National Renewable Energy Laboratory (NREL), 1617 Cole Blvd., Golden, CO 80401, U.S.A.

• Teeter Glenn

  National Renewable Energy Laboratory (NREL), 1617 Cole Blvd., Golden, CO 80401, U.S.A.

関連論文

• Growth of Biaxially Textured CeO2/YSZ/CeO2 and SrTiO3 Buffer Layers on Textured Ni Substrates by Pulsed Laser Deposition
• 18.5% Copper Indium Gallium Diselenide (CIGS) Device Using Single-Layer, Chemical-Bath-Deposited ZnS(O,OH)

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