Magnetic Tunnel Junction (MTJ) Patterning for Magnetic Random Access Memory (MRAM) Process Applications
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概要
- 論文の詳細を見る
We have developed a top free type magnetic tunnel junction (MTJ) patterning technique that involves tunnel barrier etching with enough time margins for chemical assisted ion etching (CAIE). The approximately 1 nm thick tunnel barrier enables stopping the etching process in a shorter time margin. We have found that no aluminum-oxide barrier shorting by re-deposition occurred in chlorine based CAIE, when the etching depth into anti-ferromagnetic IrMn layer was less than 5 nm. The magnetoresistance (MR) ratio of the whole MTJ patterns reached 35% on a 6-inch wafer. The time margin of the etching was 120 s, which is long enough for an magnetic random access memory (MRAM) process.
- 2003-05-15
著者
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Tahara Shuichi
Mram Spintronics R&d Center L&d Association For Future Electron Devices
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Nagahara Kiyokazu
MRAM Spintronics R&D Center, R&D Association for Future Electron Devices, 1120 Shimokuzawa, Sagamihara 229-1198, Japan
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Tahara Shuichi
MRAM Spintronics R&D Center, R&D Association for Future Electron Devices, 1120 Shimokuzawa, Sagamihara 229-1198, Japan
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Mukai Tomonori
MRAM Spintronics R&D Center, R&D Association for Future Electron Devices, 1120 Shimokuzawa, Sagamihara 229-1198, Japan
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Ishiwata Nobuyuki
Silicon System Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara 229-1198, Japan
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Hada Hiromitu
MRAM Spintronics R&D Center, R&D Association for Future Electron Devices, 1120 Shimokuzawa, Sagamihara 229-1198, Japan
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Mukai Tomonori
MRAM Spintronics R&D Center, R&D Association for Future Electron Devices, 1120 Shimokuzawa, Sagamihara 229-1198, Japan
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Hada Hiromitu
MRAM Spintronics R&D Center, R&D Association for Future Electron Devices, 1120 Shimokuzawa, Sagamihara 229-1198, Japan