Precise Scanning Tunneling Microscopy Images of Si(100) Surface Dimers at 4.2 K
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概要
- 論文の詳細を見る
The atomic geometry of the Si(100) surface has been under debate for the past four decades. Symmetric dimer in $2\times 1$ unit and asymmetric dimer in $c(4\times 2)$ and $p(2\times 2)$ units have been suggested as surface models. Our low-temperature scanning tunneling microscopy (STM) images reveal that the surface is comprised of only asymmetric dimers at 4.2 K. In order to precisely observe the surface configuration with atomic resolution, we have employed a combination of low sample bias and low tunneling current settings. The area of $p(2\times 2)$ structure has increased at 4.2 K on our sample in contrast to the surface at 77 K where $c(4\times 2)$ is widely distributed.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2003-02-01
著者
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Fujita Daisuke
Nanomaterials Laboratory National Institute For Materials Science
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Kitahara Masayo
Nanomaterials Laboratory National Institute For Materials Science
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Sagisaka Keisuke
Nanomaterials Laboratory National Institute For Materials Science
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Fujita Daisuke
Nanomaterials Laboratory, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
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Sagisaka Keisuke
Nanomaterials Laboratory, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
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