Directional Etching of Silicon by Silver Nanostructures
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概要
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We report directional etching of nanostructures (nanochannels and nanotrenches) into the Si(100) substrates in aqueous HF and H2O2 solution by lithographically defined Ag patterns (nanoparticles, nanorods, and nanorings). The Effect of Ag/Si interface oxide on the directional etching has been studied by etching Ag/SiOx/Si samples of known interface oxide thickness. Based on high resolution transmission electron microscopy (HRTEM) imaging and TEM-energy dispersive X-ray (EDX) spectra of the Ag/Si interfaces, we propose that maintenance of the sub-nanometer oxide at the Ag/Si interfaces and Ag--Si interaction are the key factors which regulate the directional etching of Si.
- 2011-02-25
著者
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Wang Yuh-lin
Institute Of Atomic And Molecular Sciences Academia Sinica
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Sharma Pradeep
Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, Taiwan 10617, R.O.C.
関連論文
- Characterization of Nanodome on GaN Nanowires Formed with Ga Ion Irradiation
- Directional Etching of Silicon by Silver Nanostructures