Effect of Electron Leakage on Efficiency Droop in Wide-Well InGaN-Based Light-Emitting Diodes

スポンサーリンク

概要

• 論文の詳細を見る

• Efficiency droop in wide-well InGaN double-heterostructure light-emitting diodes (LEDs) has been investigated by inserting an extra InGaN quantum well into the p-type side as the electron leakage test structure. The LED with a test structure exhibits an improvement of efficiency droop in the measurement range of 83.4 to 521 A/cm2. These results suggest that the electron leakage significantly decreases the peak external quantum efficiency and shifts the start point of efficiency drop to a higher current density. Additionally, the hole injection efficiency probably dominates the mechanism of efficiency droop rather than electron leakage in the wide-well InGaN DH LEDs.

• 2011-01-25

著者

• Lin Ray-ming

  Graduate Institute Of Electronic Engineering And Green Technology Research Center Chang Gung Univers

• Chang Liann-Be

  Graduate Institute of Electronic Engineering and Green Technology Research Center, Chang Gung University, Taoyuan, Taiwan 333, R.O.C.

• Lai Mu-Jen

  Graduate Institute of Electronic Engineering and Green Technology Research Center, Chang Gung University, Taoyuan, Taiwan 333, R.O.C.

• Huang Chou-Hsiung

  Graduate Institute of Electronic Engineering and Green Technology Research Center, Chang Gung University, Taoyuan, Taiwan 333, R.O.C.

• Lin Ray-Ming

  Graduate Institute of Electronic Engineering and Green Technology Research Center, Chang Gung University, Taoyuan, Taiwan 333, R.O.C.

関連論文

• Effect of Electron Leakage on Efficiency Droop in Wide-Well InGaN-Based Light-Emitting Diodes
• Efficiency Droop Characteristics in InGaN-Based Near Ultraviolet-to-Blue Light-Emitting Diodes

スポンサーリンク