Influence of Nd3+:YAG Laser Beam Profiles on Annealing and Nano-Texturing of Amorphous-Silicon Thin Films

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An application of a pulsed, solid-state laser with a Gaussian and flat-top beam profiles is considered for annealing and nano-texturing of amorphous-silicon (a-Si) films. Investigations are performed with the third harmonics (355 nm), the second harmonics (532 nm) of the Nd3+:YAG laser. To crystallize and subsequently induce texture, a-Si films are treated by spatial-overlapping of the laser spots on the surface by 50% and 90% of its size. Based on surface morphology studies, a large amount of surface peaks are observed with 90% overlap than that with 50% overlap. Samples treated with 90% overlap show a higher absorbance as compared to the 50% overlap and an improvement in photoconductivity is also observed. Nd3+:YAG laser beam with the flat-top beam profile and 90% overlap during annealing is appropriate for the photovoltaic application.
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