Quantitative Analysis of the Strain Field beneath the Si3N4/Si(001) Interface Formed by the Xe/NH3 Plasma Nitridation using a Multiple-Wave X-ray Diffraction Phenomenon
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We show a quantitative analysis of the strain field beneath the Si3N4/Si(001) interface formed by nitrogen-hydrogen (NH) radicals (the Xe/NH3 plasma nitridation). The strain field was investigated by using a multiple-wave X-ray diffraction phenomenon, i.e., interaction between the Bragg reflection and crystal-truncation-rod (CTR) scattering. We present a master formula for the amplitude of CTR scattering from a crystal with strain. We constructed model functions for the strain field and determined several parameters using the least-squares fitting. The result suggests that inversion of the sign of the strain occurs near the interface.
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一般社団法人 日本MRS | 論文
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