High-Temperature-Resistant Interconnections Formed by Using Nickel Micro-plating and Ni Nano-particles for Power Devices
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概要
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The improvement of interconnection technology is becoming a top priority for the operation of SiC devices at high temperatures. We proposed a new interconnection method using nickel electroplating to form bonds between chip electrodes and substrate leads. We also newly proposed low-temperature nickel nanoparticle sintering to form die bonding connections. SiC devices assembled with these new connection methods operated successfully in a high-temperature environment of about 300°C. We confirmed that these methods had adequate potential as an advanced heat resistant package in comparison with conventional interconnections.
- The Japan Institute of Electronics Packagingの論文
The Japan Institute of Electronics Packaging | 論文
- 特集に寄せて
- 明星大学連携研究センター大塚研究室
- 徳島文理大学理工学部電子情報工学科多田研究室
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