高温動作に対応したサンドイッチ型ワイヤボンドレスSiCパワーモジュールの作製技術
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概要
- 論文の詳細を見る
A wire bond-less SiC power module with sandwich structure is proposed for use in high-temperature devices. The module is composed of two SiC-transistors and two SiC-diodes, which are sandwiched between two ceramic circuit boards. The devices are bonded on the circuit boards using a sintered material (submicron Au paste) with a precise alignment (within ±5 μm) and height control (within ±7 μm). These two circuit boards are soldered with Au-12%Ge solder, resulting in a structured sandwich module within a tilting level of 15 μm/11-mm-substrate. No damage is observed on the devices and internal connections in the module even after 500 cycles of a thermal cycling test (-40°C~250°C).
- The Japan Institute of Electronics Packagingの論文
The Japan Institute of Electronics Packaging | 論文
- 特集に寄せて
- 明星大学連携研究センター大塚研究室
- 徳島文理大学理工学部電子情報工学科多田研究室
- Fine Pitch Wirebonds on Ultra Low-k Device
- Thermal Performance of 3D IC Package with Embedded TSVs