GaN Heteroepitaxial Growth on LiTaO3(0001) Step Substrates by Pulsed Laser Deposition
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We grew GaN epitaxial films on LiTaO<SUB>3</SUB> by pulsed laser deposition (PLD) for the first time and investigated their structural properties. Atomically flat surfaces can be achieved on the LiTaO<SUB>3</SUB> substrates by annealing at 1050°C in a box made of LiNbO<SUB>3</SUB>. We found that GaN(0001) grows epitaxially on these atomically flat LiTaO<SUB>3</SUB>(0001) substrates at substrate temperatures ranging from 580 to 700°C, with an in-plane epitaxial relationship of GaN[10\\bar10]||LiTaO<SUB>3</SUB>[11\\bar20]. X-ray reflectivity measurements revealed that the thickness of the interfacial layer between GaN and LiTaO<SUB>3</SUB> decreases from 1.9 to 0.4 nm by reducing the growth temperature from 700 to 580°C. We used GaN films grown at 580°C as buffer layers for the growth of GaN films at 700°C, and found that the crystalline quality and the surface morphology of these films were improved by the use of the low-temperature buffer layer.
- 公益社団法人 応用物理学会の論文
公益社団法人 応用物理学会 | 論文
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