Fabrication and Micro-Photoluminescence Investigation of Mg-Doped Gallium Nitride Nanorods
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High-density magnesium (Mg)-doped gallium nitride (GaN) nanorods were fabricated by inductively coupled plasma reactive ion etching from a GaN film and had a mean length of approximately 50 nm. A large blue-shift was observed in the photoluminescence (PL) peak energy of Mg-doped GaN nanorods under HeCd laser (325 nm) excitation. The PL spectra of the nanorods show a typical donor-acceptor-pair (DAP) emission at approximately 3.0 eV with a large blue-shift compared to that of the Mg-doped GaN film. The blue-shift energy increases from 8 meV to 67 meV as the excitation intensity varies from 12 kW/cm<SUP>2</SUP> to 56 kW/cm<SUP>2</SUP>. Possible reasons for the power dependence of the spectral shift in the PL emission energy are discussed.
- 公益社団法人 応用物理学会の論文
公益社団法人 応用物理学会 | 論文
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