Reverse CoSi2 Thermal Stability and Digitized Sheet Resistance Increase of Sub-90nm Polysilicon Lines
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概要
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An equation for quantifying the CoSi<SUB>2</SUB> thermal stability of polysilicon lines ranging from 50 nm to 2 μm is proposed for the first time. In contrast to the intuitive thinking of narrower lines having a worse thermal stability, the equation predicts the weakest thermal stability occurring at the super nominal line in 90 nm technology. An interesting phenomenon of digitized resistance increase is also reported for the first time.
- 公益社団法人 応用物理学会の論文
公益社団法人 応用物理学会 | 論文
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