Modeling of Two Different Operation Modes of Phase Change Material for Phase-Change Random-Access Memory
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概要
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Two basic models for phase-change random-access memory (PRAM) are compared for the first time. Model 1 is based on polycrystalline Ge<SUB>2</SUB>Sb<SUB>2</SUB>Te<SUB>5</SUB>, and the phase change takes place only in some of the film. Model 2 is based on amorphous Ge<SUB>2</SUB>Sb<SUB>2</SUB>Te<SUB>5</SUB>. This work indicates that model 1 has an excellent <I>R</I><SUB>OFF</SUB>⁄<I>R</I><SUB>ON</SUB>, but inferior structure and reset current. Model 2 has superior structure and reset current, but inferior <I>R</I><SUB>OFF</SUB>⁄<I>R</I><SUB>ON</SUB>. Therefore, for model 2, it is important to control the thickness of nonprogrammable volume to ensure sufficient <I>R</I><SUB>OFF</SUB>⁄<I>R</I><SUB>ON</SUB> and the proper range of the ratio of non-programmable volume and programmable volume is calculated as 0.003–1%. The simulation result shows the temperature distribution of model 2 can satisfy the actual requirement well, and the reset current can be reduced to 0.15 mA, much lower than that in model 1.
- 公益社団法人 応用物理学会の論文
公益社団法人 応用物理学会 | 論文
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