Effects of Hydrazine Surface Treatment on HgCdTe Long-Wavelength Infrared Photodiodes
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In this study, the effects of hydrazine treatment on the surface of HgCdTe were investigated by X-ray photoelectron spectropscopy (XPS) and metal–insulator–semiconductor (MIS) capacitance–voltage (<I>C</I>–<I>V</I>) analyses. By the XPS analysis, it was found that the Te<SUP>4+</SUP> oxide peak at 576.2 eV disappeared clearly from the surface of HgCdTe after hydrazine treatment. The hydrazine-treated sample showed a near-flatband condition, small hysteresis, and a high-frequency characteristic in <I>C</I>–<I>V</I> measurements. The photodiodes fabricated on hydrazine-treated HgCdTe showed dynamic resistance-area product values at zero bias (<I>R</I><SUB>0</SUB><I>A</I>) of ∼2.54 Ω cm<SUP>2</SUP> for a junction area of 30×30 μm<SUP>2</SUP>, which are about ten times larger than those on Br-treated HgCdTe.
- 公益社団法人 応用物理学会の論文
公益社団法人 応用物理学会 | 論文
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