Structural and Ferroelectric Properties of Ba2NaNb5O15 Thin Films on La-Doped SrTiO3 Substrates
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The <I>c</I>-axis-oriented Ba<SUB>2</SUB>NaNb<SUB>5</SUB>O<SUB>15</SUB> (BNN) thin films were prepared on La<SUB>0.05</SUB>Sr<SUB>0.95</SUB>TiO<SUB>3</SUB> substrates by pulsed laser deposition. The <I>c</I>-axis orientation and surface roughness of the BNN thin films depend on oxygen gas pressure (<I>P</I>o<SUB>2</SUB>) and substrate temperature (<I>T</I><SUB>sub</SUB>) during the deposition. When <I>P</I>o<SUB>2</SUB> and <I>T</I><SUB>sub</SUB> were fixed at 5.0 mTorr and 700°C, respectively, the BNN thin film exhibited a strong <I>c</I>-axis orientation and a smooth surface. Its remanent polarization (<I>P</I><SUB>r</SUB>) and coercive field (<I>E</I><SUB>c</SUB>) were 2<I>P</I><SUB>r</SUB>=48.5 μC/cm<SUP>2</SUP> and 2<I>E</I><SUB>c</SUB>=290 kV/cm, respectively. The band gap of this strongly <I>c</I>-axis-oriented BNN thin film was about 3.1 eV, which accords with that of the BNN single crystal.
- 公益社団法人 応用物理学会の論文
公益社団法人 応用物理学会 | 論文
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