Ferroelectric Properties of Mn-Doped Bi3.6La0.4Ti3O12 Thin Films Prepared under Different Annealing Conditions
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Ferroelectric Bi<SUB>3.6</SUB>La<SUB>0.4</SUB>Ti<SUB>3</SUB>O<SUB>12</SUB> (BLT) and Mn-doped (0.1 wt%, 0.2 wt%, and 0.3 wt%) BLT thin films were prepared by sol-gel processing. In the X-ray diffraction (XRD) results, all films exhibited a randomly oriented perovskite phase. Concerning surface morphology, the grain boundaries of the Mn-doped (0.2 wt%) BLT thin film are more closely packed than those of the nondoped BLT film without the presence of many crevices and cracks around the grain boundaries due to the volatilization of the Bi components at high temperature. The remanent polarization of the stoichiometric, 0.1 wt%, 0.2 wt% and 0.3 wt% Mn-doped BLT films annealed at a heating rate of 50°C/h, were 14 μC/cm<SUP>2</SUP>, 18 μC/cm<SUP>2</SUP>, 31 μC/cm<SUP>2</SUP> and 13 μC/cm<SUP>2</SUP>, respectively. The 0.2 wt% Mn-doped BLT thin film is a good candidate for ferroelectric memory cells and nonvolatile random access memory (NvRAM) applications.
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公益社団法人 応用物理学会 | 論文
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