Immobilization of Probe DNA on Ta2O5 Thin Film and Detection of Hybridized Helix DNA using IS-FET
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概要
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We demonstrated developments of a non-labeling DNA (deoxyribonucleic acid) sensor by using a commercially available ion-sensitive field-effect transistor (IS-FET). A single strand DNA was immobilized on a Ta<SUB>2</SUB>O<SUB>5</SUB> thin film on a gate electrode in the IS-FET, and the surface of the thin film was confirmed by XPS measurements. The results indicated that the DNA was immobilized on the Ta<SUB>2</SUB>O<SUB>5</SUB> thin film. To detect the hybridization of DNA, we carried out measurements of <I>I</I><SUB>drain</SUB>-<I>V</I><SUB>gs</SUB> properties of IS-FETs immobilized by ss-DNA and ds-DNA hybridized by complemental target DNA. Then, the difference in threshold voltage was evaluated to be about 10 mV, and the amount of immobilized DNA as 6.3×10<SUP>7</SUP> [molecules/cm<SUP>2</SUP>]. Consequently, the non-labeling IS-FET DNA sensor is expected to be a novel measurement tool for diagnosing diseases.
- 公益社団法人 応用物理学会の論文
公益社団法人 応用物理学会 | 論文
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