Highly Conductive Boron Doped Microcrystalline Si Films Deposited by Hot Wire Cell Method and its Application to Solar Cells
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Boron doped microcrystalline silicon (p-μc-Si) films were successfully deposited by the Hot Wire Cell method using a gas mixture of pure silane (SiH<SUB>4</SUB>) and diborane (0.5% B<SUB>2</SUB>H<SUB>6</SUB> in H<SUB>2</SUB>). The influence of various deposition parameters on the structural and electrical properties of the films was investigated to obtain highly conductive p-μc-Si films. A high dark conductivity (σ<SUB>d</SUB>) of 84.6 S/cm and a low activation energy of 0.02 eV were achieved for 550-nm-thick films. For thin films with a thickness of 15 nm, a σ<SUB>d</SUB> of 4×10<SUP>−2</SUP> S/cm was obtained. The thin p-μc-Si was incorporated into p–i–n amorphous silicon (a-Si) and microcrystalline silicon (μc-Si) solar cells, in which intrinsic layers were deposited by photo chemical vapor deposition (photo-CVD). The initial conversion efficiencies of 9.04% and 6.17% were obtained for a-Si and μc-Si solar cells, respectively.
- 公益社団法人 応用物理学会の論文
公益社団法人 応用物理学会 | 論文
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