Current Drive Improvement Using Enhanced Body Effect Factor Due to Finite Inversion Layer Thickness in Variable-Threshold-Voltage Complementary MOS(VTCMOS)
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概要
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A new scheme for recovering the current drive that is degraded due to the finite inversion layer thickness and gate depletion, using a high-speed mode variable-threshold-voltage complementary metal oxide semiconductor (VTCMOS), has been proposed. This scheme utilizes the body effect. The effects of finite inversion layer thickness and gate depletion enhance the body effect, and therefore substrate bias works more effectively. This enhancement of body effect is experimentally examined by measuring fully depleted silicon-on-insulator (FD SOI) metal-oxide-semiconductor field-effect transistors (MOSFETs). The effect of gate oxide thickness, the scalability of this scheme, and the impact of the short-channel effect are also discussed.
- 公益社団法人 応用物理学会の論文
公益社団法人 応用物理学会 | 論文
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