Pulsed-Sorce MOCVD of High-k Dielectric Thin Films with in situ Monitoring by Spectroscopic Ellipsometry
スポンサーリンク
概要
- 論文の詳細を見る
The formation of high-<I>k</I> thin films by pulsed-source metal-organic chemical vapor deposition (MOCVD) has been investigated with <I>in situ</I> spectroscopic ellipsometry. It is demonstrated that spectroscopic ellipsometry is an effective method for <I>in situ</I> monitoring of the fabrication of high-<I>k</I> dielectric thin films with thicknesses of several nm's. Thin yttrium oxide films with average roughnesses smaller than the thickness of a single molecular layer, and with a capacitance equivalent thickness ∼1.7 nm were obtained. Thicknesses and optical properties of each individual layer were also extracted from spectroscopic ellipsometry, by fitting to appropriate structural models.
- 公益社団法人 応用物理学会の論文
公益社団法人 応用物理学会 | 論文
- Electron Channelling Effect in an Al–Fe–Cu Quasicrystal
- Construction and Performance of a Large-Aperture Wire-Chamber Spectrometer for Pion Scattering Experiments at KEK
- Effect of Plasma Injection on Cold Wall Type MHD Generator
- Development of Scanning μ-RHEED Microscopy for Imaging Polycrystal Grain Structure in LSI
- Boundary Layer Cooling Effect on Semi-Hot Wall Type MHD Channel