Observation of Hydrogenated Silicon Clusters Si6Hx with Controlled Hydrogen Content on Si(111)-(7*7) Surfaces.
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We studied how Si<SUB>6</SUB>H<I><SUB>x</SUB></I> clusters behave on Si (111)-(7×7) surfaces depending on hydrogen content <I>x</I> by scanning tunneling microscopy. The Si<SUB>6</SUB>H<I><SUB>x</SUB></I><SUP>+</SUP> ions were synthesized in an ion trap and deposited onto the (7×7) surfaces with an impact kinetic energy of 3 eV, i.e., 0.5 eV/Si atom, without decomposition. Deposited Si<SUB>6</SUB>H<SUB>10–13</SUB> clusters favorably adsorbed on faulted halves of the (7×7) surfaces while Si<SUB>6</SUB>H<SUB>0–5</SUB> clusters were randomly distributed. A clear difference of the electronic structure between Si<SUB>6</SUB>H<SUB>0–5</SUB> and Si<SUB>6</SUB>H<SUB>10–13</SUB> clusters was found in the tunneling spectra of the clusters.
- 公益社団法人 応用物理学会の論文
公益社団法人 応用物理学会 | 論文
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