Modeling of In-Plane Distortion of Extreme Ultraviolet Lithography Mask in Flat State.
スポンサーリンク
概要
- 論文の詳細を見る
A simulation model for estimating in-plane distortion (IPD) of extreme ultraviolet lithography (EUVL) mask in a flat state was developed on the basis of a two-dimensional plane stress theory. An EUVL mask made of quartz glass was assumed in the simulation. IPD of three types of EUVL masks was investigated. The model predicts not only IPD but also the strain in the direction perpendicular to the surface. One of the IPD sources is stress gradient of the multilayer and absorber films. Discontinuity stress gradient in the pattern edge is one source of fluctuation-like displacement amplitude. A peak placement error on the mask of ±6 nm was predicted in the range of ±500 MPa absorber stress and -100 MPa multilayer stress. The fluctuation in surface height of 0.4 nm was 1/100 and below compared with the absorber thickness of 100 nm.
- 公益社団法人 応用物理学会の論文
公益社団法人 応用物理学会 | 論文
- Electron Channelling Effect in an Al–Fe–Cu Quasicrystal
- Construction and Performance of a Large-Aperture Wire-Chamber Spectrometer for Pion Scattering Experiments at KEK
- Effect of Plasma Injection on Cold Wall Type MHD Generator
- Development of Scanning μ-RHEED Microscopy for Imaging Polycrystal Grain Structure in LSI
- Boundary Layer Cooling Effect on Semi-Hot Wall Type MHD Channel