Epitaxial Growth of a (101) Pb(ZrxTi1-x)O3 Film on an Epitaxial (110) Ir/(100) ZrN/(100) Si Substrate Structure.
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We deposited an Ir film on the epitaxial (100) ZrN/(100) Si substrate and deposited a Pb(Zr<FONT SIZE="-1"><SUB><I>x</I></SUB></FONT>Ti<FONT SIZE="-1"><SUB>1-<I>x</I></SUB></FONT>)O<FONT SIZE="-1"><SUB>3</SUB></FONT> (PZT) film serially, using the sputter deposition method. The (110)-oriented Ir and (101)-oriented PZT regions in the deposited films were increased by increasing the substrate temperature <I>T<FONT SIZE="-1"><SUB>S</SUB></FONT></I> for the Ir film from 600 to 800°C while the (100)-oriented Ir and (001)-oriented PZT regions decreased. At <I>T<FONT SIZE="-1"><SUB>S</SUB></FONT></I> = 800°C, we can obtain a predominant (110)-oriented epitaxial Ir film on the epitaxial (100) ZrN film. On this epitaxial Ir film, a predominant (101)-oriented epitaxial PZT film can also be obtained around <I>T<FONT SIZE="-1"><SUB>S</SUB></FONT></I> = 600°C. We estimated the ferroelectric property of the (101) PZT film, compared with the (101) + (001) PZT film. It was found that the remanent polarization and the coercive field of the (101) PZT film were smaller than those of the (101) + (001) PZT film.
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公益社団法人 応用物理学会 | 論文
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