Formation of Epitaxial BaTiO3/SrTiO3 Multilayers Grown on Nb-Doped SrTiO3 (001) Substrates.
スポンサーリンク
概要
- 論文の詳細を見る
The formation of epitaxial BaTiO<FONT SIZE="-1"><SUB>3</SUB></FONT>/SrTiO<FONT SIZE="-1"><SUB>3</SUB></FONT> multilayers is studied in terms of the growth mechanism by investigating surface morphologies, crystalline orientations, microstructures, and structures of the interfaces, as well as by determining the dielectric properties. Under specific conditions, the epitaxial BaTiO<FONT SIZE="-1"><SUB>3</SUB></FONT> films follow a layer-then-island (Stranski-Krastanov) mechanism on SrTiO<FONT SIZE="-1"><SUB>3</SUB></FONT> (001)-oriented substrates. In view of actual efforts made to grow epitaxial superlattices involving very thin individual layers of BaTiO<FONT SIZE="-1"><SUB>3</SUB></FONT> and/or SrTiO<FONT SIZE="-1"><SUB>3</SUB></FONT>, we have determined that the BaTiO<FONT SIZE="-1"><SUB>3</SUB></FONT> films of up to 6 nm thickness do not show any defects and have a sharp BaTiO<FONT SIZE="-1"><SUB>3</SUB></FONT>-on-SrTiO<FONT SIZE="-1"><SUB>3</SUB></FONT> interface. On the contrary, SrTiO<FONT SIZE="-1"><SUB>3</SUB></FONT>-on-BaTiO<FONT SIZE="-1"><SUB>3</SUB></FONT> interfaces within multilayers are rough, probably due to the different growth mechanisms of the two different materials, or due to a difference in the morphological stability of the growth surfaces caused by different surface energies of BaTiO<FONT SIZE="-1"><SUB>3</SUB></FONT> and SrTiO<FONT SIZE="-1"><SUB>3</SUB></FONT> and by different mobilities of the Ba and Sr atoms reaching the SrTiO<FONT SIZE="-1"><SUB>3</SUB></FONT> and BaTiO<FONT SIZE="-1"><SUB>3</SUB></FONT> layers, respectively.
- 公益社団法人 応用物理学会の論文
公益社団法人 応用物理学会 | 論文
- Electron Channelling Effect in an Al–Fe–Cu Quasicrystal
- Construction and Performance of a Large-Aperture Wire-Chamber Spectrometer for Pion Scattering Experiments at KEK
- Effect of Plasma Injection on Cold Wall Type MHD Generator
- Development of Scanning μ-RHEED Microscopy for Imaging Polycrystal Grain Structure in LSI
- Boundary Layer Cooling Effect on Semi-Hot Wall Type MHD Channel