Direct Crystallization and Characterization of Bi3TiTaO9 Thin Films Prepared by Metalorganic Chemical Vapor Deposition.
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Bi<FONT SIZE="-1"><SUB>3</SUB></FONT>TiTaO<FONT SIZE="-1"><SUB>9</SUB></FONT> (BTT) thin films were prepared on (111)Pt/Ti/SiO<FONT SIZE="-1"><SUB>2</SUB></FONT>/Si substrate by electron cyclotron resonance plasma-enhanced metalorganic chemical vapor deposition (ECR-MOCVD). BTT thin films deposited at 550°C were found to consist of a single phase of bismuth layer structure by X-ray diffraction (XRD). This temperature was lower than that reported in the data for obtaining single phase SrBi<FONT SIZE="-1"><SUB>2</SUB></FONT>Ta<FONT SIZE="-1"><SUB>2</SUB></FONT>O<FONT SIZE="-1"><SUB>9</SUB></FONT> (SBT) thin films prepared by MOCVD. Furthermore, the reciprocal space mapping of BTT thin films showed the (103)-preferred orientation of this film, as well as the orientation of SBT thin films. The dielectric constant, <I>ε</I><FONT SIZE="-1"><SUB>r</SUB></FONT>, and loss tangent, tan <I>δ</I>, of the BTT thin film were 180 and 3% at 1 MHz, respectively. An abrupt increase of the leakage current of this film was observed at about 280 kV/cm.
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公益社団法人 応用物理学会 | 論文
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