Crystallinity of Thin Silicon Films Deposited at Low Temperatures: Combined Effect of Biasing and Structuring the Substrate.
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概要
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The improvement of crystallinity of thin silicon films by (i) controlling the ion flux to the substrate and (ii) structuring the substrate surface is demonstrated. Films were deposited by electron-cyclotron resonance chemical-vapor deposition (ECR CVD) at 600 K on grooved substrates that were located on a dc-biased susceptor. The degree of crystallinity as determined by Raman spectroscopy and electron microscopy improved with increasing susceptor bias <I>V</I><FONT SIZE="-1"><SUB>S</SUB></FONT>, which is explained in terms of the local heating of the film surface during initial growth. For <I>V</I><FONT SIZE="-1"><SUB>S</SUB></FONT> = 15 V a pronounced increase of grain size was observed by X-ray diffraction that is accompanied by a texture inversion from (110)- to (111)-preferred orientation. The effect is discussed in terms of an ion-assisted reaction step on the surface of the growing film.
- 公益社団法人 応用物理学会の論文
公益社団法人 応用物理学会 | 論文
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